Magnetic storage device using unipole currents for selecting memory cells
US6169688A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 18, 1999 |
| Grant date | Jan 2, 2001 |
| Priority date | — |
| Expiry date | Mar 18, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A current flow passing a data selection line both in a data write operation and data readout operation is directed to the same direction. A soft ferromagnetic film having a coercivity smaller than that of a ferromagnetic film is formed on the ferromagnetic film via a nonmagnetic conductive film. A barrier metal layer having a projecting portion is formed on the soft ferromagnetic film. A metal conductive layer is formed at the top of the projecting portion of the barrier metal layer. An insulating interlayer is formed on the entire surface. A data selection line is formed mainly in a region where the metal conductive layer is not formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.