Thermal etching process of a ceramic under oxidizing conditions
US6171511A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Oct 21, 1998 |
| Grant date | Jan 9, 2001 |
| Priority date | — |
| Expiry date | Oct 21, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E30/30
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention relates to a process for thermal etching under oxidizing conditions of a ceramic, more particularly with the aim of revealing its grain boundaries and for the study of its granular microstructure. The invention applies to technical and nuclear ceramics and in particular UO.sub.2 and to (U, Pu) O.sub.2 mixtures. The thermal etching is performed in a furnace or kiln under a controlled atmosphere constituted by an oxidizing gas supplying a chemical oxygen potential of -75 to -125 kJ/mole and comprises the following successive stages: rapid rise in the temperature of the furnace to a rate of 900 to 1500.degree. C./h from the initial temperature to a temperature plateau, maintaining the temperature at said plateau at a value of 1250 to 1450.degree. C. for between 30 and 15 minutes, lowering the temperature to the final temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.