Patent · US Expired

Infiltrated nanoporous materials and methods of producing same

US6171687A · kind A · utility

26Cited by
9References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 18, 1999
Grant dateJan 9, 2001
Priority date
Expiry dateOct 18, 2019

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/254
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In accordance with the present invention, a low dielectric constant structural layer is produced having increased mechanical strength and having a plurality of voids that comprises a substrate layer; a low dielectric structural layer juxtaposing the substrate layer; and an infiltrating layer comprising an infiltrating material having a volatile component and a reinforcing component juxtaposing the structural layer and coating at least some of the plurality of voids. Also, methods are provided in which the mechanical strength of a structural layer having a plurality of voids is increased by a) depositing the structural layer on a substrate layer; b) providing an infiltrating material having a volatile component and a reinforcing component; c) introducing the infiltrating material into at least some of the plurality of voids; and d) treating the infiltrating material such that the structural strength is increased by a substantial amount.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.