Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same
US6171982A · kind A · utility
84Cited by
6References
30Claims
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Key dates
| Filing date | Dec 22, 1998 |
| Grant date | Jan 9, 2001 |
| Priority date | — |
| Expiry date | Dec 22, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An SOI substrate having on the surface thereof a single crystal silicon film formed on an insulator is heat-treated in a hydrogen-containing reducing atmosphere in order to smooth the surface and reduce the boron concentration without damaging the film thickness uniformity in a single wafer and among different wafers. The method is characterized in that the single crystal silicon film is arranged opposite to a member of non-oxidized silicon for heat treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.