Semiconductor material
US6172380A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 1998 |
| Grant date | Jan 9, 2001 |
| Priority date | — |
| Expiry date | Nov 6, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/83
Abstract
A semiconductor material having more excellent electric characteristics than polycrystalline semiconductor materials and readily formed on various kinds of substrates is provided. The semiconductor material is made of substantially single crystalline semiconductor crystal grains 3a. These crystal grains 3a are preferentially oriented in a common surface orientation, such as {100}, {111} or {110}-orientation, and grain boundaries 3b of adjacent ones of the crystal grains 3a are in substantial lattice matching with each other at least in a part thereof. In case of {100} orientation, each crystal grain 3a has an approximately square shape, and they are regularly aligned in rows and columns. In case of {111} orientation, each crystal grain 3a has an approximately equilateral hexagonal shape, and they are aligned in an equilateral turtle shell pattern. In case of {110} orientation, each crystal grain 3a has an approximately hexagonal shape, and they are aligned in a turtle shell pattern. The semiconductor forming the crystal grains 3a is a group IV semiconductor having a diamond-type crystal structure, such as Si, Ge and C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.