Radiation-sensitive semiconductor device and method of manufacturing same
US6172408A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 1999 |
| Grant date | Jan 9, 2001 |
| Priority date | — |
| Expiry date | Mar 19, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
The invention relates to a radiation-sensitive device comprising a thin radiation-sensitive element (2), in particular a thin photodiode (2). The device includes a substrate (1) on which a photodiode (2) is provided. The surface (5) of the photodiode serves as a semi-pervious mirror (5) through which the radiation (100) enters; a reflecting layer (6) situated between the photodiode (2) and the substrate (1) also serves as a mirror (6). As a result, a so-called resonant cavity effect is possible, resulting, inter alia, in wavelength selectivity of the device. The known device has insufficient wavelength selectivity, which, in addition, cannot readily be set in an accurate and reproducible manner. A device in accordance with the invention is characterized in that the reflecting layer (6) is a metal layer (6) and in that the photodiode (2) is secured to the substrate (1) by means of an adhesive layer (7). By virtue of the high reflectivity of one (6) of the two mirrors (5, 6), the device has a great wavelength selectivity which, in addition, can be readily set in an accurate and reproducible manner. The adhesive layer (7) does not only enable the photodiode (7) to be secured to a subs…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.