Silicon delta-doped gallium arsenide/indium arsenide heterojunction OHMIC contact
US6172420A · kind A · utility
3Cited by
8References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 11, 2000 |
| Grant date | Jan 9, 2001 |
| Priority date | — |
| Expiry date | Feb 11, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/938
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An ohmic contact including a gallium arsenide substrate having an epitaxially grown crystalline layer of indium arsenide on the substrate. The crystalline material and the substrate define an interface, layers are n-doped with silicon close to the interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.