Semiconductor laser diode
US6172998A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 1997 |
| Grant date | Jan 9, 2001 |
| Priority date | — |
| Expiry date | Nov 17, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a semiconductor laser diode comprising a GaAs substrate and at least a first conduction-type clad layer, an active layer containing In, Ga and As as component elements, a second conduction-type first clad layer, a current block layer and a second conduction-type second clad layer which are deposited on the substrate in order, wherein a current injection region is formed by said current block layer and said second conduction-type second clad layer, the effective refractive index step .DELTA.n.sub.eff in the horizontal direction is from 2.5.times.10.sup.-3 to 5.0.times.10.sup.-3 at the emission wavelength, and the width W of the current injection region is from 1.5 to 2.5 .mu.m. The semiconductor laser diode of the present invention is suited for uses where high output and long life-time are required, such as excitation light source for optical fiber amplifiers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.