Thin film magnetic disk having reactive element doped refractory metal seed layer
US6174582A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 1998 |
| Grant date | Jan 16, 2001 |
| Priority date | — |
| Expiry date | Feb 6, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a thin film magnetic disk including depositing a seed layer of a refractory metal such as tantalum, Cr, Nb, W, V, or Mo and a reactive element such as N or O; depositing a nonmagnetic underlayer onto the seed layer; and depositing a magnetic layer is disclosed. Also disclosed is a thin film magnetic disk having a substrate; a seed layer comprising tantalum and at least about 1 atomic-% of nitrogen or oxygen; an underlayer comprising Cr or an alloy of chromium deposited onto the seed layer, the underlayer preferably having a preferred orientation of [200]; and a magnetic layer deposited onto the underlayer, the magnetic layer preferably having a preferred orientation of [1120]. Also disclosed is a disk drive using the thin film magnetic disk of the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.