Method of detecting microscopic defects existing on a silicon wafer
US6174727A · kind A · utility
4Cited by
5References
9Claims
0Family size
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Key dates
| Filing date | Nov 3, 1998 |
| Grant date | Jan 16, 2001 |
| Priority date | — |
| Expiry date | Nov 3, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N33/0095
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A silicon wafer having microscopic defects is immersed into the diluted hydrofluoric acid with spiking metal salt such as CuSO.sub.4.5H.sub.2 O for 1 to 3 minutes. After immersing, metals which have selectively deposited on the microscopic defects are detected by using particle counters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.