Method for making a TFT active matrix for a protection system screen
US6174745A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 1997 |
| Grant date | Jan 16, 2001 |
| Priority date | — |
| Expiry date | Oct 7, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136213
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method is provided for manufacturing, in four masking steps, an active matrix for a liquid crystal display screen whose control transistors are of the top-gate type. The liquid crystal display screen obtained by means of this method is particularly suitable for use in image projection systems. The method comprises the steps of: PA1 depositing and etching a first opaque layer on a transparent insulating plate; PA1 depositing an insulating transparent layer; PA1 depositing and etching a transparent conductor; PA1 selectively depositing an ohmic contact and subsequently depositing an intrinsic semiconductor material and a gate insulating material, and first etching of the assembly, PA1 depositing and etching an opaque conducting layer, and PA1 etching of the semiconductor layer and gate insulating layer by using as a mask the etched opaque conducting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.