Sputtering target of dielectrics having high strength and a method for manufacturing same
US6176986A · kind A · utility
45Cited by
9References
6Claims
0Family size
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Key dates
| Filing date | May 27, 1997 |
| Grant date | Jan 23, 2001 |
| Priority date | — |
| Expiry date | May 27, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02197
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A dielectric sputtering target of high strength comprising a sintered barium, strontium titanate body, which is oxygen deficient, of the formula: Ba.sub.1-x Sr.sub.x TiO.sub.3-y, wherein 0<x<1 and 0<y.ltoreq.0.03, the sintered body having a mean grain size of 0.3 to 5 .mu.m, a maximum grain size of 20 .mu.m or less, a relative density of 95% to 99%, a purity of 4N or more, a K content of 1 ppm or less, a Na content of 2 ppm or less, an Al content of 5 ppm or less, a Si content of 20 ppm or less, an Fe content of 2 ppm or less and a mean flexural strength of 150 MPa or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.