Antireflection treatment of reflective surfaces
US6177235A · kind A · utility
20Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1997 |
| Grant date | Jan 23, 2001 |
| Priority date | — |
| Expiry date | Dec 23, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to an improved photolithography process particularly suitable for high-resolution optical lithography techniques using the g, h and i lines of the spectrum of mercury and short-wavelength UV, comprising, prior to deposition of the photosensitive resin on the layer of material to be lithographically patterned, the formation of an antireflective porous layer within the said layer to be lithographically patterned and on the surface of the latter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.