Patent · US Expired

Process for determining the crystal orientation in a wafer

US6177285A · kind A · utility

6Cited by

11References

6Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Gabriele Jantke · Berlin, DE
Arno Steckenborn · Berlin, DE
Thoralf Winkler · Gauernitz, DE

Key dates

Filing date	Feb 5, 1999
Grant date	Jan 23, 2001
Priority date	—
Expiry date	Feb 5, 2019

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/973
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for determining the crystal orientation of a wafer using anisotropic etching in which an etching mask having mask openings such as circle scale marks arranged one beside the other is applied in relation to a preexisting marking of the wafer. Mask openings are configured in a double-T shape and are arranged one beside the other so that their first, transversely extending segments and the second transversely extending segments are situated at a predetermined distance apart and the areas connecting the segments are situated equidistant. The crystal orientation is determined with the distance of the two particular adjacent mask openings, the intervening space of which is least undercut, from the preexisting marking.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.