Method of fabricating thin film transistors for a liquid crystal display
US6177301A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 13, 1999 |
| Grant date | Jan 23, 2001 |
| Priority date | — |
| Expiry date | May 13, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a thin film transistor (TFT) for a liquid crystal display (LCD) device having a drive circuit and a pixel array formed on the same substrate. The method includes forming a polycrystalline silicon layer by growing silicon grains from an amorphous silicon layer using the technique of sequential lateral solidification so that the silicon grains are oriented in a first direction, forming an active layer by patterning the polycrystalline layer, the active layer defining channel directions of the TFTs which are inclined at a predetermined angle with respect to the first direction, and forming the TFTs on the active layer. The method enhances the uniformity of the physical characteristics of the TFTs formed on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.