Process for manufacture of integrated circuit device
US6177360A · kind A · utility
24Cited by
8References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 6, 1997 |
| Grant date | Jan 23, 2001 |
| Priority date | — |
| Expiry date | Nov 6, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a process for making an integrated circuit device comprising (i) a substrate, (ii) metallic circuit lines positioned on the substrate, and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises the condensation product of silsesquioxane in the presence of a photosensitive or thermally sensitive base generator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.