Ion implanter with impurity interceptor which removes undesired impurities from the ion beam
US6177679A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 1999 |
| Grant date | Jan 23, 2001 |
| Priority date | — |
| Expiry date | Jan 21, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3171
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implanter which prevents undesired impurities from being implanted into a wafer has an ion source for producing an ion beam which is to be implanted into a wafer, an accelerator for accelerating the ion beam, and an impurity interceptor for intercepting impurities generated in the accelerator. The impurity interceptor has an intercepting plate electrically connected to a high voltage power supply, and an opening formed in the center of the plate. Undesired ions having an energy lower than the high voltage applied to the intercepting plate are intercepted, and only those desired ions having an energy higher than the high voltage applied to the intercepting plate pass through the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.