Semiconductor device having an improved structure for preventing cracks, improved small-sized semiconductor and method of manufacturing the same
US6177725A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 1998 |
| Grant date | Jan 23, 2001 |
| Priority date | — |
| Expiry date | Oct 2, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor element having a plurality of electrodes on an upper surface thereof. A first substrate has a plurality of conductors on an upper surface thereof. The first substrate is mounted on the upper surface of the semiconductor element and is smaller in area than the semiconductor element. A second substrate has a plurality of solderballs on an upper surface thereof. The second substrate is mounted on the upper surface of the first substrate and is smaller in area than the first substrate. An adhesive layer is disposed between the first substrate and the semiconductor element, and causes the first substrate to be affixed to the semiconductor element. A plurality of metal wires electrically couple the electrodes on the semiconductor element to the conductors on the first substrate. A sealing frame is attached to the semiconductor element. A cap is bonded to both the second substrate and the sealing frame. An interior region is defined by the semiconductor element, the first and second substrates, the cap and the sealing frame. The wires are disposed in the interior region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.