Semiconductor package
US6177731A · kind A · utility
65Cited by
13References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 1999 |
| Grant date | Jan 23, 2001 |
| Priority date | — |
| Expiry date | Aug 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An organic resin film 27 having an opening on an electrode pad is formed on a main surface of an IC chip 10, and a protruding electrode 12 formed on the electrode pad is formed of a low melting point eutectic solder. As a result, the protruding electrode 12 is formed without melting the organic resin film while preventing a crack from being generated by a stress applied between the electrode pad and the IC chip. Thus, the reliability of a semiconductor package can be enhanced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.