Distributed impedance matching circuit for high reflection coefficient load
US6177872A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 1998 |
| Grant date | Jan 23, 2001 |
| Priority date | — |
| Expiry date | Nov 13, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG08B13/2462
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
An impedance matching circuit in accordance with the principles of the present invention employs series-connected transmission lines to match a high reflection coefficient source impedance with a load impedance. The matching circuit is formed on a dielectric substrate material and accommodates the relatively limited capabilities of photo-lithographic circuit production. The new impedance matching circuit may be constructed of three series-connected transmission line sections. A first section, the section that is to be connected to the source, transforms the high source impedance into a relatively low valued impedance that is substantially resistive. The reflection coefficient of the first section is substantially equal to the reflection coefficient of the source. A second may be implemented as a quarter-wave transformer that transforms the low impedance developed by the first section into an intermediate impedance value. The third section transforms this intermediate value impedance into an impedance that substantially matches that of the load.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.