Method of manufacturing electron-emitting device electron source and image-forming apparatus
US6179678A · kind A · utility
54Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 4, 1999 |
| Grant date | Jan 30, 2001 |
| Priority date | — |
| Expiry date | Feb 4, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2329/0489
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1.mu.m, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm.sup.-1 is greater than a peak (P1) located in the vicinity of 1,335 cm.sup.-1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm.sup.-1 is not greater than 150 cm.sup.-1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.