Continuous flow process for production of semiconductor nanocrystals
US6179912A · kind A · utility
109Cited by
10References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1999 |
| Grant date | Jan 30, 2001 |
| Priority date | — |
| Expiry date | Dec 20, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/835
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a system and continuous flow process for producing monodisperse semiconductor nanocrystals comprising reservoirs for the starting materials, a mixing path in which the starting materials are mixed, a first reactor in which the mixture of starting materials is mixed with a coordinating solvent and in which nucleation of particles occurs, a second reactor in which controlled growth of the nanocrystals occurs, and a growth termination path in which the growth of the nanocrystals is halted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.