Method for producing semiconductor base members
US6180497A · kind A · utility
41Cited by
4References
39Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 21, 1999 |
| Grant date | Jan 30, 2001 |
| Priority date | — |
| Expiry date | Jul 21, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a semiconductor base member that can be used as a Silicon on Insulator (SOI) wafer is presented. To produce an SOI wafer, it is necessary to prepare a base member having a porous layer upon which a non porous layer is formed. To make the pore size distribution of a porous layer uniform, a surface comprising atom steps and terraces is formed on the surface of a silicon base material and made porous without eliminating the steps and terraces, and then a nonporous semiconductor single-crystal film is formed thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.