Thin film transistors with organic-inorganic hybrid materials as semiconducting channels

US6180956A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Konstantinos Chondroudis · Sunnyvale, US
• Christos D. Dimitrakopoulos · Baldwin Place, US
• Cherie R. Kagan · Bala-Cynwyd, US
• Ioannis Kymissis · New York, US
• David B. Mitzi · Campion Road, US

Key dates

• Filing date: Mar 3, 1999
• Grant date: Jan 30, 2001
• Expiry date: Mar 3, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/50

Abstract

An FET structure in accordance with the invention employs an organic-inorganic hybrid material as the semiconducting channel between source and drain electrodes of the device. The organic-inorganic material combines the advantages of an inorganic, crystalline solid with those of an organic material. The inorganic component forms an extended, inorganic one-, two-, or three-dimensional network to provide the high carrier mobilities characteristic of inorganic, crystalline solids. The organic component facilitates the self-assembly of these materials and enables the materials to be deposited by simple, low temperature processing conditions such as spin-coating, dip-coating, or thermal evaporation. The organic component is also used to tailor the electronic properties of the inorganic framework by defining the dimensionality of the inorganic component and the electronic coupling between inorganic units.