Structure for increasing the maximum voltage of silicon carbide power transistors
US6180958A · kind A · utility
81Cited by
25References
31Claims
0Family size
Inventor
Key dates
| Filing date | Feb 7, 1997 |
| Grant date | Jan 30, 2001 |
| Priority date | — |
| Expiry date | Feb 7, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A silicon carbide insulated gate power transistor is disclosed that demonstrates increased maximum voltage. The transistor comprises a field effect or insulated gate transistor with a protective region adjacent the insulated gate that has the opposite conductivity type from the source for protecting the gate insulator material from the degrading or breakdown effects of a large voltage applied across the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.