Method for preparing dense, epitaxial metal oxide film
US6183554A · kind A · utility
1Cited by
3References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 19, 1999 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | Mar 19, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C18/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for forming a dense, epitaxial metal oxide film on a single crystal substrate, including cleaning the surface of the single crystal substrate, contacting the cleaned surface with a polar organic compound such as a small molecular weight alcohol, so that the cleaned surface adsorbs the polar organic compound, then applying a hydrocarbon solvent solution containing at least one organic group-containing metal compound on the polar organic compound-adsorbed surface, and then heating the substrate to decompose the organic group-containing metal compound and to form a dense epitaxial metal oxide film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.