Method of retaining the integrity of a photoresist pattern
US6183940A · kind A · utility
7Cited by
14References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 1998 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | Mar 17, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of retaining the integrity of a photoresist pattern is provided where the patterned photoresist is treated prior to etching the principle layer. The pre-etch treatment encompasses a plasma treatment. In some embodiments employing an anti-reflective coating (ARC) layer, an isolation/protective layer is used to isolate the ARC from the photoresist. In some embodiments, the pre-etch treatment, advantageously provides for patterning the isolation/protection layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.