MOCVD precursors based on organometalloid ligands
US6184403A · kind A · utility
10Cited by
1References
42Claims
0Family size
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Inventors
Key dates
| Filing date | May 19, 1999 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | May 19, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/92
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Chemical vapor deposition processes utilize as precursors volatile metal complexes with ligands containing metalloid elements silicon, germanium, tin or lead.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.