Photovoltaic element and production method therefor
US6184458A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 1999 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | Jun 8, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S136/293
Abstract
A photovoltaic element with a low shadow, a high energy conversion efficiency, a high freedom in dimension and a high reliability with prolonged use is provided. The photovoltaic element comprises a photovoltaic layer having a first semiconductor junction layer for generating an electromotive force, a current collecting electrode provided at the light incident side of the photovoltaic layer, and a bypass diode connected in parallel, wherein the bypass diode is provided under the current collecting electrode as a bypass diode layer having a second semiconductor junction layer other than the first semiconductor junction layer of the photovoltaic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.