Trench storage dynamic random access memory cell with vertical transfer device

US6184549A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Toshiharu Furukawa · South Burlington, US
• Mark C. Hakey · Saint Albans, US
• David V. Horak · South Burlington, US
• William H. Ma · Wappingers Falls, US
• Jack A. Mandelman · Stormville, US

Key dates

• Filing date: Apr 23, 1999
• Grant date: Feb 6, 2001
• Expiry date: Apr 23, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/488

Abstract

A trench storage dynamic random access memory cell with vertical transfer device can be formed in a wafer having prepared shallow trench isolation. Vertical transfer device is built as the deep trenches are formed. Using square printing to form shallow trench isolation and deep trenches, allows for scaling of the cell to very small dimensions.