Electron emission device with electron supply layer of hydrogenated amorphous silicon
US6184612A · kind A · utility
37Cited by
3References
2Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 7, 1998 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | Aug 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2329/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer is made of hydrogenated amorphous silicon. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.