Electron beam apparatus and method of driving the same
US6184626A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 8, 1998 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | Oct 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2329/00
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An electron beam apparatus comprises an electron-emitting device, an anode separated from the electron-emitting device by a distance H (m), means for applying a voltage Vf (V) to the device, and means for applying a voltage Va (V) to the anode. The device has an electron-emitting region arranged between a lower potential side electroconductive thin film which is connected to a lower potential side electrode and a higher potential side electroconductive thin film which is connected to a higher potential side electrode. The device also has a film containing a semiconductor substance with a thickness not greater than 10 nm. The semiconductor-containing film extends on the higher potential side electroconductive thin film from the electron-emitting region toward the higher potential side electrode over a length L (m). The above Vf, Va, H and L satisfy the relationship L.gtoreq.(1/.pi.).multidot.(Vf/Va).multidot.H.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.