Apparatus for a semiconductor memory with independent reference voltage
US6185142A · kind A · utility
3Cited by
3References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 22, 1999 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | Apr 22, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory of the present invention includes a sense amplifier for amplifying a potential difference between a potential of a first terminal and a potential of a second terminal, a first load gate located between the first terminal and a bit line, and a second load gate located between the second terminal and a reference line. A current flowing to the first load gate is controlled by a potential of the bit line, and a current flowing to the second load gate is controlled by a potential of the reference line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.