High cell density power rectifier
US6186408A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 1999 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | May 28, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/86
Abstract
A power rectifier having low on resistance, fast recovery times and very low forward voltage drop. In a preferred embodiment, the present invention provides a power rectifier device employing a vertical device structure, i.e., with current flow between the major surfaces of the discrete device. The device employs a large number of parallel connected cells, each comprising a MOSFET structure with a gate to drain short via a common metallization. A self aligned body implant and a shallow silicide drain contact region integrated with a metal silicide drain contact define a narrow channel region and allow very high cell density. This provides a low V.sub.f path through the channel regions of the MOSFET cells to the contact on the other side of the integrated circuit. The present invention further provides a method for manufacturing a rectifier device which provides the above desirable device characteristics in a repeatable manner. Also, only two masking steps are required, reducing processing costs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.