Arrays of semi-metallic bismuth nanowires and fabrication techniques therefor
US6187165A · kind A · utility
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9Claims
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Key dates
| Filing date | Oct 1, 1998 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | Oct 1, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1136
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Novel arrays of nanowires made of semi-metallic Bismuth (Bi) is disclosed made by unique electrodeposition techniques. Because of the unusual electronic properties of the semi-metallic Bi and the nanowire geometry, strong finite size effects in transport properties are achieved. In addition, very large positive magnetoresistance, 300% at low temperatures and 70% at room temperature, with quasilinear field dependence have been attained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.