Method of producing a conductive silicon carbide-based sintered compact
US6187256A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 1998 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | Apr 8, 2018 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF01N2330/14
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process is described for producing a conductive sintered body based on silicon carbide, in which PA1 a) silicon carbide particles, optionally pretreated with a surface modifier, are dispersed in an aqueous and/or organic medium and positive or negative surface charges are generated on the silicon carbide particles by adjustment of the pH of the dispersion obtained; PA1 b) carbon black and boron carbide are mixed in as sintering aids, where at least the carbon black particles have a surface charge opposite to the surface charge of the silicon carbide particles and the boron carbide can also be added, completely or in part, at a later point in time (stage c')); PA1 c) the slip thus obtained is shaped directly to form a green body or PA1 c') a sinterable powder is isolated from the slip obtained and is shaped to form a green body, where the above boron carbide can also be added to this sinterable powder; and PA1 d) the green body obtained is subjected to pressureless sintering to form a sintered body in essentially three successive steps, namely (i) preheating to 1200-1900.degree. C. in a nitrogen containing atmosphere (ii), sintering at 1900-2200.degree. C. in a noble gas atmospher…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.