Thin film transistor and a fabricating method thereof
US6188108A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 1999 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | Dec 9, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6739
Abstract
The present invention relates to a thin film transistor and a fabricating method thereof which improve device characteristics by forming a substance layer such as a vacuum layer or an air layer, which has a remarkable characteristic of insulation, on an active layer. The present invention includes an insulated substrate, an active layer on the insulated substrate wherein the active layer has a source region, a channel region and a drain region, a gate insulating layer having an inner space on the channel region, and a gate electrode on the gate insulating layer over the channel region. And, the present invention includes the steps of forming an active layer on an insulated substrate, forming a gate insulating layer having an inner space on the active layer, forming a gate electrode on the gate insulating layer, and forming a source region and a drain region in the active layer by doping the substrate including the active layer with impurities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.