Normally conducting dual thyristor
US6188267A · kind A · utility
5Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 15, 1999 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | Apr 15, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/136
Abstract
The present invention relates to a component forming a normally on dual thyristor, which can be turned off by a voltage pulse on the control electrode, including a thyristor, a first depletion MOS transistor, the gate of which is connected to the source, connected between the anode gate and the cathode of the thyristor, and a second enhancement MOS transistor, the gate of which is connected to a control terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.