Method for manufacturing a liquid crystal display apparatus
US6190951A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 1999 |
| Grant date | Feb 20, 2001 |
| Priority date | — |
| Expiry date | Jul 2, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/133302
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to method for manufacturing a liquid crystal display apparatus in which a thin film transistor formed by successively depositing on a glass substrate a gate electrode, a gate insulating film, an active layer made of amorphous silicon, a source electrode and a drain electrode is used for driving liquid crystal. The method includes steps of: forming the gate electrode by patterning a gate metal layer coating the glass substrate by a wet etching process using an etchant containing cerium ammonium nitrate; removing an etching reaction product adhering on the substrate by washing it with a hydrofluoric acid solution; and forming the gate insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.