Method for producing a Schottky diode assembly formed on a semiconductor substrate

US6191015A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Reinhard Losehand
• Hubert Werthmann · Birkenfeld, DE

Key dates

• Filing date: May 17, 1999
• Grant date: Feb 20, 2001
• Expiry date: May 17, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/112

Abstract

A Schottky diode assembly includes a Schottky contact formed on a semiconductor substrate and having a semiconductor region of a first conduction type, a metal layer disposed adjacently on the semiconductor region, a protective structure constructed on a peripheral region of the Schottky contact and a doped region in the semiconductor substrate having a second conduction type of opposite polarity from the first conduction type. The doped region extends from a main surface of the semiconductor substrate to a predetermined depth into the semiconductor substrate. The doped region of the protective structure has at least two different first and second doped portions located one below the other relative to the main surface of the semiconductor substrate. The first doped portion is at a greater depth and has a comparatively lesser doping, and the second doped portion has a comparatively higher doping and a slight depth adjacent the main surface of the semiconductor substrate.