Method for forming film and method for fabricating semiconductor device
US6191054A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 1999 |
| Grant date | Feb 20, 2001 |
| Priority date | — |
| Expiry date | Oct 6, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In forming a film by a chemical vapor deposition (CVD) process using, as a source material, an organometallic complex dissolved in a solvent, a method for reducing the quantity of carbon compounds mixed into the film is provided. According to this method, a nonpolar solvent is used for dissolving the organometallic complex or an organometallic compound therein. Unlike a polar group contained in a polar solvent, the nonpolar solvent includes no organic molecular group with a large molecular weight to be coordinated with the organometallic complex. Thus, electrical interaction between the organometallic complex and the solvent can be suppressed, and the quantity of carbon compounds mixed into the film can be reduced as a result.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.