Radiation probe with compound semiconductor crystal performing in a trapping-dependent operational mode
US6191422A · kind A · utility
16Cited by
12References
29Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 6, 1998 |
| Grant date | Feb 20, 2001 |
| Priority date | — |
| Expiry date | Oct 6, 2018 |
Classification
- Technology area (CPC A)Human Necessities
- CPC primaryA61B6/4258
- WIPO fieldMedical technology
- WIPO sectorInstruments
Abstract
A hand-held radiation probe is configured having a crystal thickness as well as a bias generated electrical field which have values to cause the semiconductor crystal to operate in a trapping-dependent operational mode wherein a trapping of substantially all carriers generated by radiation impinging upon the crystal forward face are trapped. The bias level voltage is selected to achieve adequate photopeak heights and to permit the windowing out of lower energy Compton scattering and other noise phenomena.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.