Semiconductor light emitting device and method of manufacturing the same
US6191437A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 1999 |
| Grant date | Feb 20, 2001 |
| Priority date | — |
| Expiry date | Sep 21, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
Abstract
An n-type layer (3) and a p-type layer (5) which are made of a gallium nitride based compound semiconductor are provided on a substrate (1) so that a light emitting layer forming portion (10) for forming a light emitting layer is provided. A gallium nitride based compound semiconductor layer containing oxygen is used for at least one layer of the light emitting layer forming portion (10). In the case where a buffer layer (2) made of the gallium nitride based compound semiconductor or aluminum nitride is provided between the substrate (1) and the light emitting layer forming portion (10), the buffer layer (2) and/or at least one layer of the light emitting layer forming portion (10) may contain oxygen. By such a structure, crystal defects of the semiconductor layer of the light emitting layer forming portion (10) can be decreased and a luminance can highly be enhanced. Thus, it is possible to obtain a blue color type semiconductor light emitting device having a high luminance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.