Ferroelectric memory device and its drive method
US6191441A · kind A · utility
20Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 26, 1998 |
| Grant date | Feb 20, 2001 |
| Priority date | — |
| Expiry date | Oct 26, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/033
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A ferroelectric memory capable of writing data at a small operation voltage has an insulated-gate field effect transistor, a ferroelectric film, and a pair of capacitor electrodes formed on the ferroelectric film and facing each other, one of the pair of capacitor electrodes being electrically connected to the insulated gate. A ferroelectric memory device with a simple structure has an insulated-gate field effect transistor including a source, a drain, and an insulated gate, and a ferroelectric capacitor connected between the drain and the insulated gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.