Apparatus and method of improving an insulating film on a semiconductor device
US6191463A · kind A · utility
63Cited by
11References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 14, 1998 |
| Grant date | Feb 20, 2001 |
| Priority date | — |
| Expiry date | Jul 14, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, and an electrode formed on the first insulating film. The first insulating film contains a halogen element and a combination of silicon and nitrogen or a combination of silicon, oxygen, and nitrogen. The maximum concentration of the halogen element in the first insulating film ranges from 10.sup.20 atoms/cm.sup.3 to 10.sup.21 atoms/cm.sup.3 inclusive. With this structure, the dielectric breakdown strength and the like of the insulating film increase, and the reliability of the insulating film improves.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.