Magnetic sensor exhibiting large change in resistance at low external magnetic field
US6191577A · kind A · utility
12Cited by
11References
12Claims
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Key dates
| Filing date | Mar 6, 1998 |
| Grant date | Feb 20, 2001 |
| Priority date | — |
| Expiry date | Mar 6, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A magnetoresistive sensor includes a plurality of multilayered magnetoresistive films arranged in parallel. Each multilayered magnetoresistive film includes at least one pinned ferromagnetic layer and at least one free magnetic layer. Reversion of magnetization of the pinned ferromagnetic layer is pinned, whereas the vector of magnetization of the free ferromagnetic layer freely reverses in response to an external magnetic field. The vectors of magnetization of the pinned ferromagnetic layers in two adjacent multilayered magnetoresistive films are substantially antiparallel to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.