Method of manufacturing a poly-crystalline silicon film
US6194023A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 1998 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Sep 25, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6745
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a poly-crystalline silicon (p-Si) film includes the steps in which an excimer laser anneals an amorphous silicon (a-Si) film deposited on a glass substrate and makes the same into the poly-crystalline silicon while the glass substrate is moved in a moving direction relative to the laser. Prior to carrying out the annealing step, a couple of the laser pulses are applied to different places of the a-Si film, provided that each of the laser pulses has different energy fluence and one pulse at a time is applied to the a-Si film. The pulse applied area is divided into two sections by a reference line perpendicular to the moving direction of the glass substrate. Average grain sizes of the p-Si film in the two sections are compared to each other to determine the moving direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.