Electronic device having perovskite-type oxide film, production thereof, and ferroelectric capacitor
US6194228A · kind A · utility
54Cited by
7References
45Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 1998 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Oct 21, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02356
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing an electronic device including an oxide film of perovskite-type, said method comprising the steps of forming on a base substrate a first conductive oxide film of perovskite type in an atmosphere of reduced pressure at a first temperature, and performing heat treatment on the first conductive oxide film in an oxidizing atmosphere containing oxygen at a second temperature which is higher than the first temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.