Semiconductor light emitting device and method of manufacturing the same
US6194241A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 1998 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Apr 14, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor layered portion is formed of a gallium-nitride semiconductor overlying a substrate and having an n-type layer and a p-type layer to form a light emitting layer having a pn junction or a doublehetero junction. A gradient layer is provided at an interfacial portion between an lower layer and an upper layer of the semiconductor layered portion, wherein the gradient layer has a composition varied from a composition from said lower layer to a composition of the upper layer. With this structure, a semiconductor light emitting device which is excellent in light emitting efficiency is provided by reducing crystal lattice mismatch between semiconductor layers formed different in lattice constant on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.