Method of manufacturing a photodiode in a solid-state device
US6194244A · kind A · utility
10Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 2, 1998 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Jul 2, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/014
Abstract
The solid-state image sensor comprises a semiconductor substrate, a plurality of photoelectric conversion sections formed within respective isolated active regions on the semiconductor substrate, an image area wherein unit cells comprising the plurality of photoelectric conversion sections and a signal scanning circuit are arranged in a two-dimensional array form, and signal lines for reading signals from the respective unit cells within the image pick-up area, wherein the respective photoelectric conversion sections being formed by at least twice ion implantation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.